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Документ Scandium-silicon multilayer X-ray mirrors with CrB2 barrier layers(Сумський державний університет, 2018) Pershyn, Yuriy P.; Devizenko, A. Yu.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Voronov, Dmitriy L.; Gullikson, E. M.Methods of X-ray reflectometry λ0.154 nm), cross-sectional transmission electron microscopy and re flectometry in the EUV region (λ = 41-51 nm) were used to investigate the barrier properties of CrB2 layers 0.3-1.3 nm thick in Sc/CrB2/Si multilayer X-ray mirrors (MXMs) deposited by DC magnetron sputtering. It is shown that barrier layers of ~ 0.3 nm separate Sc and Si layers completely and prevent interacting the Sc and Si layers. Thinner chromium diboride layers interact with the matrix layers forming interlayers containing mostly ScB2 on the Si-on-Sc interfaces and CrSi2 on the Sc-on-Si ones. Scandium-silicon MXMs with barrier layers on the both interfaces are shown to retain high reflectivity at the wavelength of λ ~ 47 nm.Документ Growth and structure of WC/SI multilayer X-ray mirror(Національний науковий центр «Харківський фізико-технічний інститут», 2018) Pershyn, Yuriy P.; Chumak, V. S.; Shypkova, I. G.; Mamon, Valentine V.; Devizenko, A. Yu.; Kondratenko, Valeriy V.; Reshetnyak, M. V.; Zubarev, Evgeniy N.WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and crosssectional transmission electron microscopy (TEM). Carbide and silicon layers are amorphous throughout the studied thickness range. The WC layers interact with Si layers with formation of tungsten silicides (WSi2, W5Si3) and silicon carbide in as-deposited state. The bottom interlayer (WC-on-Si) consists of two subzones of approximately equal thickness. An estimation of the thickness, density, and composition of all layers is made. Based on the experimental data, a five-layer model of the WC/Si MXM structure is suggested.Документ Interdiffusion in Sc/Si multilayers(ESRF, 2008) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Pershin, Yuri P.; Sevrukova, Victoriya A.; Bugaev, Yegor A.Документ Structural transformations in Sc/Si multilayers irradiated by EUV lasers,(SPIE, 2007) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Pershyn, Yuriy P.; Sevryukova, Victoriya A.; Kondratenko, Valeriy V.; Artioukov, Igor A.; Uspenskiy, Yuriy A.; Grisham, Michael; Vaschenko, Georgiy; Menoni, Carmen S.; Rocca, Jorge J.Multilayer mirrors for the extreme ultraviolet (EUV) are key elements for numerous applications of coherent EUV sources such as new tabletop lasers and free-electron lasers. However the field of applications is limited by the radiation and thermal stability of the multilayers. Taking into account the growing power of EUV sources the stability of the optics becomes crucial. To overcome this problem it is necessary to study the degradation of multilayers and try to increase their temporal and thermal stability. In this paper we report the results of detailed study of structural changes in Sc/Si multilayers when exposed to intense EUV laser pulses. Various types of surface damage such as melting, boiling, shock wave creation and ablation were observed as irradiation fluencies increase. Cross-sectional TEM study revealed that the layer structure was completely destroyed in the upper part of multilayer, but still survived below. The layers adjacent to the substrate remained intact even through the multilayer surface melted down, though the structure of the layers beneath the molten zone was noticeably changed. The layer structure in this thermally affected zone is similar to that of isothermally annealed samples. All stages of scandium silicide formation such as interdiffusion, solid-state amorphization, silicide crystallization etc., are present in the thermally affected zone. It indicates a thermal nature of the damage mechanism. The tungsten diffusion barriers were applied to the scandium/silicon interfaces. It was shown that the barriers inhibited interdiffusion and increased the thermal stability of Sc/Si mirrors.Документ Thermoresistive multilayer mirrors antidiffusion barriers for work at the wavelengths 40-50nm(American Institute of Physics, 2002) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Penkov, Alexey V.; Pershin, Yuriy P.; Ponomarenko, Alexander G.; Artioukov, Igor A.; Vinogradov, Alexander V.; Uspenskii, Yuriy A.To improve the thermal stability of Si/Sc multilayer mirrors, thin layers of W were deposited at interlayer boundaries. Using X-ray scattering and transmission electron microscopy, we studied the interaction of Si and Sc layers at elevated temperatures. It was shown that the W layers of 0.5-0.8 nm thickness form dense WSi2 barriers, which prevent a direct contact between Si and Sc and greatly slow down the formation of scandium silicides. Presented measurements show that Si/W/Sc/W multilayers fabricated by de-magnetron sputtering possess long thermal stability up to 250° C and the normal incidence reflectivity of 24 %.Документ Effect of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers(SPIE, 2013) Pershyn, Yuriy P.; Gullikson, Eric M.; Kondratenko, Valeriy V.; Mamon, Valentine V.; Reutskaya, Svetlana A.; Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Artyukov, Igor A.; Vinogradov, Alexander VladimirovichBy methods of cross-sectional transmission electron microscopy and small-angle x-ray scattering (λ = 0.154 nm) the influence of Ar gas pressure (1 to 4 mTorr) on the growth of amorphous interfaces in Mo/Si multilayers (MLs) deposited by DC magnetron sputtering is studied. The significant reduction in the ML period, which is evident as a volumetric contraction, is observed in MLs deposited at Ar pressure where the mean-free path for the sputtered atoms is comparable with the magnetronsubstrate distance. Some reduction in the thickness of the amorphous interlayers with Ar pressure increase is found, where the composition of the interlayers is enriched with molybdenum. The interface modification resulted in an increase in EUV reflectance of the Mo/Si MLsДокумент Friction and Wear Characteristics of C/Si Bi-layer Coatings Deposited on Silicon Substrate by DC Magnetron Sputtering(Springer, 2012) Penkov, Oleksiy V.; Bugayev, Yegor A.; Zhuravel, Igor; Kondratenko, Valeriy V.; Amanov, Auezhan; Kim, Dae-EunThe tribological behavior of carbon/silicon bi-layer coatings deposited on a silicon substrate by DC magnetron sputtering was assessed and compared to that of amorphous carbon and silicon coatings. The motivation was to develop a wear resistant coating for silicon using thin layers of amorphous carbon and silicon. Wear tests were conducted by sliding a stainless steel ball against the coating specimens under applied normal loads in the range of 20 * 50 mN. Results showed that the wear rate of the bi-layer coating was strongly dependent on the ratio of thickness between the carbon and silicon layers. The wear rate of the bi-layer coating with 25 nm thick carbon and 102 nm thick silicon layers was about 48 and 20 times lower than that of the single-layer amorphous carbon and amorphous silicon coating, respectively. In addition, the steady-state friction coefficient of the bi-layer coating could be decreased to 0.09 by optimizing the thickness of the layer. Finally, a model for the wear reduction mechanism of the carbon/silicon bi-layer coating was proposed.Документ Growth and crystallization of molybdenum layers on amorphous silicon(Elsevier Ltd, 2011) Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Pershyn, Yuriy P.; Sevryukova, Victoriya A.The structure of molybdenum layers deposited by direct current magnetron sputtering onto the amorphous silicon (a-Si) layers as function of nominal layer thickness was studied by methods of transmission electron microscopy. Molybdenum layers with nominal thickness 1.5btMo nomb1.9 nm consist of clusters which should be considered as a transient state between strongly disordered (amorphous) state and crystal one. A transition from clusters to polycrystals takes place within the thickness range of 1.9btMo nomb2.5 nm. Resulting Mo crystallites have an inequiaxial form with dimensions of (3–4)×(15–30)nm2 and consist of blocks. The lateral axis of inequiaxial crystallites is parallel to 110 direction. As the metal layer thickness increases Mocrystallites take the more regular form at the expense of recrystallization.