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Постійне посилання на розділhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/35393
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10 результатів
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Документ Development and new application of single-crystal silicon solar cells(2011) Khrypunov, G. S.; Kopach, V. R.; Kirichenko, M. V.; Zaitsev, R. V.Документ Nanostructured Semiconductor Heterostructures for Ultraviolet Sensors, Solar Cells and Semitransparent Diodes Manufactured by Chemical and Electrochemical Methods(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Klepikova, K. S.; Lukianova, O. V.; Korsun, V. E.; Lyubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Near Ultraviolet Photodetector Based on Electrodeposited in Pulse Mode Zinc Oxide Arrays(Institute of Electrical and Electronics Engineers, 2016) Klepikova, K. S.; Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Lubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Investigation the parameters of multijunction single crystal silicon solar cells with vertical diode cells test samples(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Polezhaeva, O. V.; Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.Документ Attestation of solar cells by back EMF method(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Lobatenko, D. D.; Kirichenko, M. V.; Zaitsev, R. V.; Kopach, V. R.Документ Double-layer ITO/Al back surface reflector for single-junction silicon photoconverters(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.It has been shown that to increase the efficiency and manufacturability of single-crystal silicon photovoltaic solar energy converters (Si-PVC) with 180-200 μm thick base crystals having a polished photoreceiving surface and double-layer back surface reflector (BSR) consisting of a transparent oxide and aluminum layers, a conductive transparent indium-tin oxide (ITO) layer of 0.25 μm interference thickness is to be used as the nonmetallic BSR layer. It provides the ITO/Al BSR reflection coefficient in the range of 85 < R < 96 % for solar radiation photoactive component incident the Si-PVC back surface at substantially zero contribution of ITO layer resistance to the device series resistance. In the case of Si-PVC with inverted pyramid type texture of crystal photoreceiving surface at which the specificity of light distribution in the crystal causes total reflection of radiation from Si/ITO interface, the ITO layer thickness should be experimentally optimized in the 1-2 μm range independently of base crystal thickness to minimize the photoactive radiation losses and ITO layer resistance.Документ New approach to the efficiency increase problem for multi-junction silicon photovoltaic converters with vertical diode cells(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.; Bondarenko, S. A.It is shown, that for efficiency increase of multi-junction photovoltaic solar energy converters with vertical diode cells (VDC) on the basis of single-crystal silicon the modernization of VDC by the introduction along their vertical Si-boundaries single-layer indiumtin oxide reflectors by thickness more than 1 μm is necessary.Документ Back surface reflector optimization for thin single crystalline silicon solar cells(Scientific and Technological Corporation "Institute for Single Crystals", 2007) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.; Tymchuk, I. T.; Antonova, V. A.; Listratenko, A. M.It has been shown that for single crystalline silicon solar cells (Si-SC) with 180-200 μm thick base crystals, the optimum back surface reflector (BSR) is TiO₂/Al with 0.18 μm thick oxide layer. At such BSR, the reflection coefficient for photoelectric active sunlight reaching the back surface of Si-SC at 0.88-1.11 μm wavelengths attains 81 to 92 % against of 71 to 87 % at direct Al contact with back surface of silicon base crystal.Документ Single-crystal silicon solar cell efficiency increase in magnetic field(Scientific and Technological Corporation "Institute for Single Crystals", 2010) Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.; Lukyanov, E. O.; Khrypunov, G. S.; Samofalov, V. N.It is established in experiment that efficiency of unijunction (UJ) single-crystal silicon solar cells (Si-SC) with horizontal n⁺-p-p⁺ diode structure may increase by a factor of approximately 1.1 after their holding at room temperature during 7 days in perpendicularly oriented stationary magnetic field with 0.2 T induction. The subsequent stabilizing of the obtained positive effect is shown to be realizable by attachment of a thin magnetic vinyl layer (creating in the UJ Si-SC base crystal a magnetic field with induction not exceeding 0.05 T) to the UJ Si-SC at the back electrode side.Документ Sensitivity of silicon photovoltaic converters to the light incidence angle on their receiving surface(Астропринт, 2009) Kirichenko, M. V.; Kopach, V. R.; Zaitsev, R. V.; Bondarenko, S. A.The results of output parameters dependences researches for multijunction silicon photovoltaic converters (PVC) upon solar radiation incidence angle on their receiving surface are presented. It has been shown that for improving of PVC efficiency is necessary to achieve the increased values of minority charge carriers lifetime in their base crystals as well as the optical reflection coefficient for metal/Si boundaries (interfaces) inside multijunction PVC, while for using multijunction PVC in the optical location systems the forced reduction of these values is reasonable.