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Постійне посилання на розділhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/35393
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Документ Growth and structure of WC/SI multilayer X-ray mirror(Національний науковий центр «Харківський фізико-технічний інститут», 2018) Pershyn, Yuriy P.; Chumak, V. S.; Shypkova, I. G.; Mamon, Valentine V.; Devizenko, A. Yu.; Kondratenko, Valeriy V.; Reshetnyak, M. V.; Zubarev, Evgeniy N.WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and crosssectional transmission electron microscopy (TEM). Carbide and silicon layers are amorphous throughout the studied thickness range. The WC layers interact with Si layers with formation of tungsten silicides (WSi2, W5Si3) and silicon carbide in as-deposited state. The bottom interlayer (WC-on-Si) consists of two subzones of approximately equal thickness. An estimation of the thickness, density, and composition of all layers is made. Based on the experimental data, a five-layer model of the WC/Si MXM structure is suggested.Документ The structure of Mo/Si multilayers prepared in the conditions of ionic assistance(Springer, 2008) Zubarev, Evgeniy N.; Kondratenko, V. V.; Sevryukova, V. A.; Yulin, S. A.; Feigl, T.; Kaiser, N.The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.Документ Kinetics of phase transitions in highly oriented graphite intercalated with potassium(STC "Institute for Single Crystals", 2020) Mikhailov, I. F.; Zubarev, Evgeniy N.; Mikhailov, A. I.; Mamon, V. V.; Borisova, S. S.; Surovitskiy, S. V.Документ Structure and phase formation features of Ti-Zr-Ni quasicrystalline films under heating(Sumy State University, 2019) Malykhin, S. V.; Kondratenko, V. V.; Kopylets, I. A. ; Surovitskiy, S. V.; Baturin, A. A.; Mikhailov, I. F.; Reshetnyak, M. V.; Borisova, S. S.; Bogdanov, Yu. S.The paper describes the growth features of thin Ti-Zr-Ni films prepared by the method of magnetron sputtering of the targets with compositions Ti₅₃Zr₃₀Ni₁₈ and Ti₄₁Zr₃₈.₃Ni₂₀.₇ on the substrates at 300 K with subsequent annealing in vacuum. The formation peculiarities of phase composition, structure and thermal stability of quasicrystalline thin films were studied. It was established that in initial state the films were X-ray-amorphous or nanocrystalline with coherence lengths (according to Scherrer) near 1.6-1.8 nm independently on the element composition of the sputtered target. This structure is relatively stable up to the temperature 673 K when the formation of the quasi-crystalline phase begins. In the films with composition of Ti₅₃Zr₃₀Ni₁₈. It is added with an admixture of the 1/1 W-crystal approximant phase. In the films with Ti₄₁Zr₃₈.₃Ni₂₀.₇ composition, an optimal annealing temperature is between 823 K and 873 K. Additionally, for the first time, the data on the formation of 2/1 approximant crystal as an admixture phase in this system were obtained. Under annealing at the temperatures higher than 873 K, the decomposition of the quasi-crystalline and approximant phases into crystalline phases stable at higher temperatures according to the equilibrium phase diagram was established.Документ Structural-phase changes in thin films and surface layers of Ti₄₁.₅Zr₄₁.₅Ni₁₇ alloy, stimulated by radiation-thermal impact of hydrogen plasma(Kharkiv Institute of Physics and Technology, 2019) Malykhin, S. V.; Makhlai, V. A.; Surovitskiy, S. V.; Borisova, S. S.; Herashchenko, S. S.; Kondratenko, V. V.; Kopylets, I. A.; Baturin, A. A.; Terentyev, D.X-ray diffraction and SEM microscopy were used to study structural and phase changes in the surface layers of a Ti₄₁.₅Zr₄₁.₅Ni₁₇ alloy bulk sample (target) and a thin film (deposited by magnetron sputtering of the target) under radiation-thermal action of pulsed hydrogen plasma with a thermal load of 0.6 MJ/m² in QSPA Kh-50 installation. It is established that the irradiation results in the formation of a two-phase state: the icosahedral quasicrystalline phase together with the phase of the 1/1 approximant crystal (W-phase). As a result of isothermal (550°C) annealing, the content of the quasicrystalline phase increases.Документ Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes(Kharkiv Institute of Physics and Technology, 2020) Malykhin, S. V.; Makhlai, V. A.; Surovitskiy, S. V.; Garkusha, I. E.; Herashchenko, S. S.; Kondratenko, V. V.; Kopylets, I. A.; Zubarev, Evgeniy N.; Borisova, S. S.; Fedchenko, A. V.X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has been worked out for the formation of the quasicrystalline and crystal-approximant phases as a result of high-speed quenching using pulsed action with a heat load of 0.6 MJ/m². The changes in the contents of these phases as well as in their structure and substructure parameters were studied during isothermal vacuum annealing at a temperature of 550 °C and also as a result of irradiation with 5 plasma pulses in the range of heat load from 0.1 to 0.4 MJ/m². The quasicrystalline phase was found to be resistant to irradiation with hydrogen plasma.Документ On application of X-ray approximation method for studying the substructure of sufficiently perfect samples(Institute for Single Crystals, 2017) Malykhin, S. V.; Garkusha, I. E.; Makhlay, V. A.; Surovitsky, S. V.; Reshetnyak, M. V.; Borisova, S. S.The technique of X-ray diffraction investigation of coherence length and micro-strain level using approximation of diffraction line profiles by Gaussian and Cauchy functions as well as by harmonic analysis has been worked out for tungsten samples with quite perfect structure. The importance of right choice of a standard for obtaining the reasonable measurement results has been demonstrated. For the first approximation the possibility to use the spectral line width for calculation of the reflection true (physical) broadening has been shown. The contributions of basic instrumental factors into the reflection geometric broadening were estimated.