Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors
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Springer
Abstract
Specific structural changes in Sc/Si multilayers (MLs) irradiated by nanosecond 46.9-nm single laser pulses with fluences of 0.04-5.00 J/cm2 were studied by methods of SEM and cross-sectional TEM. The threshold damage was found to be 0.08 J/cm2 The ML melts down under the fluence F >0.08 J/cm2 and the exothermic reaction of silicide formation starts. Main degradation mechanisms
of MLs are discussed. The results of this study can be used for development of advanced multilayer mirrors capable handling the intense radiation conditions of new generation coherent X-ray sources.
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Citation
Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors [Electronic resource] / Yu. P. Pershyn [et al.] // Springer Proc. in Physics. – 2007. – Vol. 115. – X-Ray Lasers 2006 / edited by P. V. Nickles and K. A. Janulewicz, – Electronic text data. – Dordrecht (The Netherlands) : Springer, 2007. – P. 563-569. – URI: https://www.researchgate.net/publication/226998995_Analysis_of_469-nm_Pulsed_Laser_Radiation_Aftereffects_in_ScSi_Multilayer_X-Ray_Mirrors/link/0fcfd5045abdca356c000000/download, free (accessed 27.06.2022).