Разработка базовых слоёв диоксида олова для газовых датчиков абсорбционно-полупроводникового типа

Abstract

By a measuring оf surface conductivity versus temperature dependences for tin dioxide films deposited by chemical vapor deposition (CVD) we researched their gas sensitivity with the aim to develop a gas sensor of absorption- semiconductor type. Gas sensitivities of tin dioxide films at the different temperatures in the presence of various concentration of nitrogen monoxide, oxygen and nitrogen in gas mixtures as such as in the nitrogen monoxide and nitrogen dioxide mixture in the air were obtained experimentally. A temperature dependences of the tin dioxide films gas-sensitivity for an ethyl alcohol impurity the in the air (SC2H5OH = 10000ppm) and ammonia vapor in the air (SNH3 = 6600ppm) were identified. The gas sensitivity of the SnO2 films with the different concentrations of C2H5OH and NH3 vapor impurities in the air at 450o C was investigated. The temperature dependence of the recovery of the tin dioxide films electrical properties after their reaction with ethyl alcohol (SC2H5OH = 10000ppm) and ammonia (SNH3 = 6600ppm) vapors of in the air were researchedv