Crystal growth in amorphous films of tantalum pentoxide

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dc.contributor.authorBagmut, A. G.
dc.date.accessioned2023-05-31T12:25:02Z
dc.date.available2023-05-31T12:25:02Z
dc.date.issued2023
dc.description.abstractAmorphous films are formed on substrates at room temperature in the process of pulsed laser sputtering of Ta target in an oxygen atmosphere. Electron beam irradiation causes their crystallization with the formation of Ta2O5 crystals with hexagonal lattice. Electron microscope investigation, including “in situ” and video recording methods, revealed the following crystallization modes in different regions of the same amorphous film of Ta2O5. 1. Island polymorphous crystallization. 2. Interjacent crystallization mode. 3. Layer polymorphous crystallization mode. The presence of three different crystallization modes is explained by the phenomenon of polyamorphism in amorphous films.
dc.identifier.citationBagmut A. G. Crystal growth in amorphous films of tantalum pentoxide [Electronic resource] / A. G. Bagmut // Molecular Crystals and Liquid Crystals. – Electronic text data. – 2023. – P. 1-9. – Access mode: https://www.tandfonline.com/doi/full/10.1080/15421406.2023.2215032, free (date of the application 31.05.2023.).
dc.identifier.doihttps://doi.org/10.1080/15421406.2023.2215032
dc.identifier.orcidhttps://orcid.org/0000-0003-1296-4002
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/65668
dc.language.isoen
dc.subjectcrystallization modes
dc.subjectpolyamorphism
dc.subjectrelative length
dc.subjecttantalum pentoxide
dc.subjectvideo
dc.titleCrystal growth in amorphous films of tantalum pentoxide
dc.typeArticle

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