Радиационные нанотехнологии модификации модельных кристаллов электронными возбуждениями: 3. Рекомбинационные механизмы

Abstract

Recombination of radiation-induced created charge carriers results in formation of self-trapped molecular centers, which stimulate the creation of nanoscale defects of Frenkel type in rare-gas solids. In combination with luminescence-kinetic analysis of processes of accumulation of radiation-induced crystal lattice defects the recombination mechanisms may be used for controlled modification of sample crystal structure and for analytical control and certification of growing rare-gas cryocrystals