Кафедра "Фізика"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/7578

Офіційний сайт кафедри http://web.kpi.kharkov.ua/tef

Кафедра "Фізика" створена у 2016 році шляхом об'єднання кафедри "Загальна та експериментальна фізика" і кафедри "Теоретична та експериментальна фізика", заснованої в 1972 році. .

У 1885 р. для викладання в інституті курсу фізики на посаду ад’юнкт-професора був запрошений магістр фізики приват-доцент Харківського університету Олександр Костянтинович Погорілко. У різні роки на кафедрі працювали видатні вчені-фізики: Пільчиков Н. Д., Латишев Г. Д., Обреїмов І. В., Пінес Б. Я., Ландау Л. Д., Корсунський М. І., Веркин Б. І., Дмитренко І. М., Базакуца В. А., Кулик І. О., Янсон І. К., Басс Ф. Г. Гуревич Ю. Г., Косевич В. М., Кукушкін Л. С. та ін.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут".

У складі науково-педагогічного колективу кафедри працюють: 2 доктора та 16 кандидатів фізико-математичних наук, 2 кандидата технічних наук, 1 кандидат педагогічних наук; 2 співробітника мають звання професора, 12 – доцента.

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1993 - 199922000 - 20065

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Автор: search.filters.author.Rogacheva, E. I.Кінцева дата: 2009

Результати пошуку

Зараз показуємо 1 - 7 з 7
  • Ескіз
    Документ
    Thermoelectric and mechanical properties of bismuth-doped lead telluride
    (Інститут термоелектрики НАН України, 2005) Rogacheva, E. I.; Liubchenko, S. G.
    The effect of elementary introduced Bi upon thermoelectric properties and microhardness of PbTe is investigated. Non-monotonous behaviour of PbTe properties dependence on bismuth content isestablished. Intricate behaviour of the dependences is associated with the modification of Bi dissolution pattern observed under composition variations as well as percolation effects and selfarrangement processes in the impurity subsystem of the crystal. Concentrations of Bi corresponding to maximum values of thermoelectric power are determined.
  • Ескіз
    Документ
    Concentration anomaly of heat capacity in PbTe based solid solutions
    (2002) Rogacheva, E. I.; Sinelnik, N. A.; Krivulkin, I. M.
    The temperature dependences of the heat capacity in the Pb₁₋ₓMnₓTe and Pb₁₋ₓGeₓTe (x = 0-0.04) solid solutions based on PbTe were obtained in the temperature range of 100-670 K. Pronounced peaks were observed in the isotherms of the heat capacity in the vicinity of x ~ 0.01-0.015. The presence of the peaks is explained on the basis of the idea about the existence of concentration phase transitions of percolation type, which take place in any solid solution and are related to transformation of impurity discontinuum into impurity continuum.
  • Ескіз
    Документ
    Temperature dependences and isotherms of galoanomagnetic properties of Bi doped PbTe crystals and thin films
    (Науково-технологічний комплекс "Інститут монокристалів", 2006) Rogacheva, E. I.; Lyubchenko, S. G.; Vodorez, O. S.
    The temperature dependences of galvanomagnetic properties (the Hall coefficient, electrical conductivity, charge carrier mobility) of (PbTe)₁₀₀₋ₓBiₓ (x = 0-1) alloys obtained by doping PbTe with elementary Bi and thin films prepared from these alloys were studied in the temperature range 80-300 K. On the basis of the temperature dependences, the isotherms of the properties on the Bi concentration, which had been observed earlier at room temperature, is preserved at lower temperatures. This confirms our earlier suggestion about the self-organization processes taking place in the defect subsystem of the crystal at certain Bi concentrations.
  • Ескіз
    Документ
    Plastic deformation instabilities in Bi crystals under microindentation
    (Науково-технологічний комплекс "Інститут монокристалів", 2005) Rogacheva, E. I.; Yakovleva, A. A.; Lyubchenko, S. G.
    The dependences of microhardness H on the load on indentor were obtained for bismuth single- and polycrystals. The general tendency to H decreasing with P increasing up to ~0.15 N is observed. After that the microhardness practically does not change. In the range of P = 0.05-0.15 N, in the H(P) dependences the oscillations are detected whose presence is e[plained by qualititative changes in plastic deformation micromechanisms and in the crystal defect structure under increasing indentor load.
  • Ескіз
    Документ
    Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica
    (Науково-технологічний комплекс "Інститут монокристалів", 2005) Rogacheva, E. I.; Grigorov, S. N.; Lyubchenko, S. G.; Sipatov, A. Yu.; Volobuev, V. V.; Dresselhaus, M. S.
    The growth mechanisms, structure, and thermoelectric properties of thin PbTe films prepared by thermal evaporation in vacuum and subsequent deposition on mica substrates at temperatures Ts = 375, 525 and 635 K were studied. The films were prepared from charge with different electron concentrations (n = 10¹⁷ and n = 10²⁰ cmˉ³). The film thickness was varied in the range d = 4-500 nm. Electron microscopy study showed that PbTe grows on mica epitaxially in an island like fashion predominantly in the (111) orientation. It is established that in PbTe films there exists a critical thickness at which the transition from electron to hole conductivity with decreasing d is observed. Covering films with a protective layer, lowering the substrate temperature and increasing electron concentration in the charge result in narrowing of the thickness range corresponding to hole conductivity. It is shown that electron concentrations n in the charge and in thick PbTe films grown at the substrate temperature Ts = 525 K differ, the character and magnitude of this difference depending on n in the charge.
  • Ескіз
    Публікація
    Defects of non-stoichiometry and dynamic stability of SnTe crystal lattice
    (1993) Rogacheva, E. I.; Sinelnik, N. A.; Nashchekina, O. N.; Popov, V. P.; Lobkovskaya, T. A.
    The temperature dependencies of coefficient of linear expansion α in the range of 4.2-300 K were obtained for SnTe samples with various degrees of deviation from stoichiometry. For the sample of stoichiometric composition in the α vs. temperature curves the anomalies connected with ferroelectric phase transition were detected. It was found that within cubic phase existence region α isotherms have a minimum at 50.4 at.% Te. Maximum dynamic stability at indicated composition is believed to be associated with the formation of vacancy superstructure.
  • Ескіз
    Публікація
    Concentration anomalies of properties in Pb₁₋ₓGeₓTe solid solutions
    (1993) Rogacheva, E. I.; Sinelnik, N. A.; Nashchekina, O. N.
    The investigation of electrical conductivity, coefficient of thermal electromotive force, Hall coefficient, microhardness and mobility in Pb₁₋ₓGeₓΤe (x = 0 : 0.1) alloys in the temperature range of 77-300 K was carried out. Anomalies were detected in isotherms of properties in the vicinity of x = 0.008. The anomalies were treated as a manifestation of concentration phase transitions occurring in solid solutions of any kind and associated with existence of critical concentration (percolation threshold) at which the uninterrupted chain of interactions between impurity atoms is formed.