Кафедра "Фізика металів і напівпровідників"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4703

Офіційний сайт кафедри http://web.kpi.kharkov.ua/fmp

Від 2002 року кафедра має назву "Фізика металів і напівпровідників", попередня назва – кафедра металофізики.

Кафедра металофізики організована в 1930 році у складі фізико-механічного факультету ХММІ. Деканом факультету був у ті роки видатний вчений-фізик, академік Іван Васильович Обреїмов.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут". За час існування кафедрою підготовлено близько 3000 інженерів, у тому числі і для зарубіжних країн.

У складі науково-педагогічного колективу кафедри працюють: 3 доктора та 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора.

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Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation
(IOP Publishing Ltd, 2009) Pershyn, Yuriy P.; Zubarev, Evgeniy N.; Voronov, D. L.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Artioukov, Y. A.; Uspenskii, Y. A.; Vinogradov, A. V.
Specific structural changes in Sc/Si multilayer mirrors irradiated with extreme ultraviolet (EUV) laser single pulses (λ = 46.9 nm) at near damage threshold fluences (0.04–0.23 J cm−2) are analysed. We have identified melting of surface layers as the basic degradation mechanism for the mirrors. Both heat generation during silicide formation and low heat conduction of the layered system significantly decreases the degradation threshold of Sc/Si multilayer mirrors compared with bulk materials. The results are relevant to the use of the multilayer mirrors for shaping and directing the intense beams produced by the new generation of coherent EUV sources
The structure of Mo/Si multilayers prepared in the conditions of ionic assistance
(Springer, 2008) Zubarev, Evgeniy N.; Kondratenko, V. V.; Sevryukova, V. A.; Yulin, S. A.; Feigl, T.; Kaiser, N.
The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.
Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors
(Springer, 2007) Pershyn, Yuriy P.; Voronov, D. L.; Zubarev, Evgeniy N.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Vinogradov, A. V.; Artyukov, I. A.; Uspenskii, Yu. A.
Specific structural changes in Sc/Si multilayers (MLs) irradiated by nanosecond 46.9-nm single laser pulses with fluences of 0.04-5.00 J/cm2 were studied by methods of SEM and cross-sectional TEM. The threshold damage was found to be 0.08 J/cm2 The ML melts down under the fluence F >0.08 J/cm2 and the exothermic reaction of silicide formation starts. Main degradation mechanisms of MLs are discussed. The results of this study can be used for development of advanced multilayer mirrors capable handling the intense radiation conditions of new generation coherent X-ray sources.
Structure, thermal stability and reflectivity of Sc/Si and Sc/W/Si/W multilayer X-ray mirrors
(SPIE, 2001) Vinogradov, A. V.; Pershin, Yu. P.; Zubarev, Evgeniy N.; Voronov, D. L.; Pen’kov, A. V.; Kondratenko, V. V.; Uspenskii, Yu. A.; Artioukov, I. A.; Seely, J. F.
Processes going on at elevated temperatures between Sc and Si layers in Sc/Si coatings are studied by X-ray scattering and cross-sectional transmission electron microscopy. It is shown that the W layers of 0.5-0.8nm placed at Sc-Si interfaces form effective barriers preventing the penetration of Si into Sc. The effects of Si-Sc diffusion and W-barriers on the reflectivity of coatings are calculated in good agreement with experimental results. Presented measurements show that the Sc/W/Si/W multilayers with the period of 20.5 nm fabricated by dc-magnetron sputtering possess thermal stability up to 250 C and the normal incidence reflectivity of 24% at wavelengths about 40 nm.
Nanoscale Co/C multilayer for "carbon window" Schwarzschild objective
(STC "Institute for Single Crystals", 2007) Bugayev, Ye. A.; Devizenko, O. Y.; Zubarev, Evgeniy N.; Kondratenko, V. V.