Кафедра "Фізика металів і напівпровідників"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4703

Офіційний сайт кафедри http://web.kpi.kharkov.ua/fmp

Від 2002 року кафедра має назву "Фізика металів і напівпровідників", попередня назва – кафедра металофізики.

Кафедра металофізики організована в 1930 році у складі фізико-механічного факультету ХММІ. Деканом факультету був у ті роки видатний вчений-фізик, академік Іван Васильович Обреїмов.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут". За час існування кафедрою підготовлено близько 3000 інженерів, у тому числі і для зарубіжних країн.

У складі науково-педагогічного колективу кафедри працюють: 3 доктора та 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора.

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2007 - 20093

Налаштування

Автор: search.filters.author.Pershyn, Yuriy P.Кінцева дата: 2009

Результати пошуку

Зараз показуємо 1 - 3 з 3
  • Ескіз
    Документ
    Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation
    (IOP Publishing Ltd, 2009) Pershyn, Yuriy P.; Zubarev, Evgeniy N.; Voronov, D. L.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Artioukov, Y. A.; Uspenskii, Y. A.; Vinogradov, A. V.
    Specific structural changes in Sc/Si multilayer mirrors irradiated with extreme ultraviolet (EUV) laser single pulses (λ = 46.9 nm) at near damage threshold fluences (0.04–0.23 J cm−2) are analysed. We have identified melting of surface layers as the basic degradation mechanism for the mirrors. Both heat generation during silicide formation and low heat conduction of the layered system significantly decreases the degradation threshold of Sc/Si multilayer mirrors compared with bulk materials. The results are relevant to the use of the multilayer mirrors for shaping and directing the intense beams produced by the new generation of coherent EUV sources
  • Ескіз
    Документ
    Structural transformations in Sc/Si multilayers irradiated by EUV lasers,
    (SPIE, 2007) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Pershyn, Yuriy P.; Sevryukova, Victoriya A.; Kondratenko, Valeriy V.; Artioukov, Igor A.; Uspenskiy, Yuriy A.; Grisham, Michael; Vaschenko, Georgiy; Menoni, Carmen S.; Rocca, Jorge J.
    Multilayer mirrors for the extreme ultraviolet (EUV) are key elements for numerous applications of coherent EUV sources such as new tabletop lasers and free-electron lasers. However the field of applications is limited by the radiation and thermal stability of the multilayers. Taking into account the growing power of EUV sources the stability of the optics becomes crucial. To overcome this problem it is necessary to study the degradation of multilayers and try to increase their temporal and thermal stability. In this paper we report the results of detailed study of structural changes in Sc/Si multilayers when exposed to intense EUV laser pulses. Various types of surface damage such as melting, boiling, shock wave creation and ablation were observed as irradiation fluencies increase. Cross-sectional TEM study revealed that the layer structure was completely destroyed in the upper part of multilayer, but still survived below. The layers adjacent to the substrate remained intact even through the multilayer surface melted down, though the structure of the layers beneath the molten zone was noticeably changed. The layer structure in this thermally affected zone is similar to that of isothermally annealed samples. All stages of scandium silicide formation such as interdiffusion, solid-state amorphization, silicide crystallization etc., are present in the thermally affected zone. It indicates a thermal nature of the damage mechanism. The tungsten diffusion barriers were applied to the scandium/silicon interfaces. It was shown that the barriers inhibited interdiffusion and increased the thermal stability of Sc/Si mirrors.
  • Ескіз
    Документ
    Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors
    (Springer, 2007) Pershyn, Yuriy P.; Voronov, D. L.; Zubarev, Evgeniy N.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Vinogradov, A. V.; Artyukov, I. A.; Uspenskii, Yu. A.
    Specific structural changes in Sc/Si multilayers (MLs) irradiated by nanosecond 46.9-nm single laser pulses with fluences of 0.04-5.00 J/cm2 were studied by methods of SEM and cross-sectional TEM. The threshold damage was found to be 0.08 J/cm2 The ML melts down under the fluence F >0.08 J/cm2 and the exothermic reaction of silicide formation starts. Main degradation mechanisms of MLs are discussed. The results of this study can be used for development of advanced multilayer mirrors capable handling the intense radiation conditions of new generation coherent X-ray sources.