Кафедра "Фізика металів і напівпровідників"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4703

Офіційний сайт кафедри http://web.kpi.kharkov.ua/fmp

Від 2002 року кафедра має назву "Фізика металів і напівпровідників", попередня назва – кафедра металофізики.

Кафедра металофізики організована в 1930 році у складі фізико-механічного факультету ХММІ. Деканом факультету був у ті роки видатний вчений-фізик, академік Іван Васильович Обреїмов.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут". За час існування кафедрою підготовлено близько 3000 інженерів, у тому числі і для зарубіжних країн.

У складі науково-педагогічного колективу кафедри працюють: 3 доктора та 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора.

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Growth and structure of WC/SI multilayer X-ray mirror
(Національний науковий центр «Харківський фізико-технічний інститут», 2018) Pershyn, Yuriy P.; Chumak, V. S.; Shypkova, I. G.; Mamon, Valentine V.; Devizenko, A. Yu.; Kondratenko, Valeriy V.; Reshetnyak, M. V.; Zubarev, Evgeniy N.
WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and crosssectional transmission electron microscopy (TEM). Carbide and silicon layers are amorphous throughout the studied thickness range. The WC layers interact with Si layers with formation of tungsten silicides (WSi2, W5Si3) and silicon carbide in as-deposited state. The bottom interlayer (WC-on-Si) consists of two subzones of approximately equal thickness. An estimation of the thickness, density, and composition of all layers is made. Based on the experimental data, a five-layer model of the WC/Si MXM structure is suggested.
Structure and phase formation features of Ti-Zr-Ni quasicrystalline films under heating
(Sumy State University, 2019) Malykhin, S. V.; Kondratenko, V. V.; Kopylets, I. A. ; Surovitskiy, S. V.; Baturin, A. A.; Mikhailov, I. F.; Reshetnyak, M. V.; Borisova, S. S.; Bogdanov, Yu. S.
The paper describes the growth features of thin Ti-Zr-Ni films prepared by the method of magnetron sputtering of the targets with compositions Ti₅₃Zr₃₀Ni₁₈ and Ti₄₁Zr₃₈.₃Ni₂₀.₇ on the substrates at 300 K with subsequent annealing in vacuum. The formation peculiarities of phase composition, structure and thermal stability of quasicrystalline thin films were studied. It was established that in initial state the films were X-ray-amorphous or nanocrystalline with coherence lengths (according to Scherrer) near 1.6-1.8 nm independently on the element composition of the sputtered target. This structure is relatively stable up to the temperature 673 K when the formation of the quasi-crystalline phase begins. In the films with composition of Ti₅₃Zr₃₀Ni₁₈. It is added with an admixture of the 1/1 W-crystal approximant phase. In the films with Ti₄₁Zr₃₈.₃Ni₂₀.₇ composition, an optimal annealing temperature is between 823 K and 873 K. Additionally, for the first time, the data on the formation of 2/1 approximant crystal as an admixture phase in this system were obtained. Under annealing at the temperatures higher than 873 K, the decomposition of the quasi-crystalline and approximant phases into crystalline phases stable at higher temperatures according to the equilibrium phase diagram was established.
Features of the initial stage of the formation of Ti-Zr-Ni quasicrystalline thin films
(Sumy State University, 2020) Malykhin, S. V.; Kondratenko, V. V.; Kopylets, I. A. ; Surovitskiy, S. V.; Shipkova, I. G.; Mikhailov, I. F.; Zubarev, Evgeniy N.; Bogdanov, Yu. S.
Using the methods of X-ray diffraction, transmission and scanning microscopy, the features of the initial stage of the formation of the quasicrystalline phase in thin films of Ti-Zr-Ni are studied. The films were obtained by magnetron sputtering of a target of the composition Ti₄₁Zr₃₈.₃Ni₂₀,₇ (at. %) with deposition on substrates at T = 300 K and further vacuum annealing. It was established that immediately after deposition, the films are X-ray amorphous, nanostructured. An analysis of the radial distribution functions shows that immediately after deposition, the structural state of a disordered cluster, which is topologically close to icosahedral, prevails in the near atomic medium. It is concluded that the atoms are not arranged randomly, but form a "transitional" structure with an imperfect order like three shells of the Bergman cluster stacking using icosahedrons and dodecahedrons. Such a structure is a "prepared" nucleus for the further formation of the icosahedral phase upon heating. An analysis of the annealing results suggests that the qualitative nature of the transition from the pseudo-amorphous to the quasicrystalline phase and the scale of the transformations are determined by the annealing time and temperature, as well as by the film thickness. The smaller the thickness, the more the annealing processes are inhibited. It was shown that by annealing the films of a thickness of 6 μm or more at 500 °C for more than 28 h, single-phase quasicrystalline coatings with a quasicrystallinity parameter aq of about 0.5245 nm can be obtained.
Properties of magnetron hydroxyapatite coatings deposited on oxidized substrates
(Collegium Basilea & AMSI, 2016) Starikov, V. V.; Kostuchenko, A. V.; Starikova, S. L.; Mamalis, A. G.; Lavrynenko, S. N.
Hydroxyapatite (HA) coating were formed on oxidized niobium surfaces by the highfrequency magnetron sputtering method using hydroxyapatite and tricalcium phosphate targets. The structure, substructure and mechanical properties of the Nb–Nb2O5–HA system were investigated by X-ray diffraction, atomic force microscopy and nanoindentation and the stress state was assessed. The synthesized hydroxyapatite film had the following characteristics: thermal expansion coefficient 10–5 K–1; modulus of elasticity 120 GPa; adhesive strength not less than 0.45 kg/mm2; density 2900 kg/m3. The stress magnitude in the metal oxide substrate was from 11 to 14 MPa after hydroxyapatite film deposition.
The influence of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers
(American Institute of Physics, 2011) Pershyn, Yuriy P.; Gullikson, E. M.; Artyukov, I. A.; Kondratenko, V. V.; Sevryukova, V. A.; Voronov, D. L.; Zubarev, Evgeniy N.; Vinogradov, A. V.
Impact of Ar gas pressure (1−4 mTorr) on the growth of amorphous interlayers in Mo/Si multilayers deposited by magnetron sputtering was investigated by small-angle x-ray scattering (l=0.154 nm) and methods of cross-sectional transmission electron microscopy. Some reduction of thickness of the amorphous inter-layers with Ar pressure increase was found, while composition of the layers was enriched with molybdenum. The interface modification resulted in raise of EUV reflectance of the Mo/Si multilayers