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Документ Effect of deviation from stoichiometry on transport and mechanical properties of Bi2Se3 polycrystals(AIP Publishing, 2021) Menshikova, S. I.; Rogacheva, E. I.The dependences of electrical conductivity, the Hall coefficient, the Seebeck coefficient, thermoelectric power factor and microhardness of Bi2Se3 polycrystals on the degree of deviation from stoichiometry 59.9–60.0 at. % Se and temperature (77–300 K) were obtained. The samples exhibited n-type conductivity in the studied ranges of compositions and temperatures. The boundaries of the Bi2Se3 homogeneity region were estimated. A non-monotonic behavior of the concentration dependences of the properties in the studied composition range, associated with a change in the phase composition and defect structure under the deviation from stoichiometry, was observed. The calculation of the power coefficient in the temperature dependence of electron mobility showed that in a stoichiometric Bi2Se3, electrons are predominantly scattered by acoustic phonons, and under the deviation from stoichiometry the contribution of impurity scattering increases. Based on the experimental data, the Fermi energy EF was calculated in the approximation of the relaxation time and within the framework of the single-band model with a quadratic dispersion law. The obtained values of EF showed that both in stoichiometric and non- stoichiometric Bi2Se3, the conduction is mainly due to electrons in the lower conduction subband.Публікація Percolation transition and physical properties of Bi1-xSbx solid solutions at low Bi concentration(Elsevier Ltd, 2020) Rogacheva, E. I.; Doroshenko, A. N.; Khramova, T. I.; Nashchekina, O. N.; Fedorov, A. G.; Mateychenko, P. V.The dependences of microhardness H, electrical conductivity σ, charge carrier mobility μH, the Seebeck coefficient S, and thermoelectric power factor P = S2σ on the composition of Bi1-xSbx solid solutions in the vicinity of pure Sb (x = 1.0–0.975) were obtained. In the range of x = 0.9925–0.9875, an anomalous decrease in H and S and increase in σ and μH with increasing Bi concentration were observed. For all the alloys, the dependences of H on the load on an indenter G were plotted. It was found that the H(G) dependences for samples with x smaller than ~ 0.99 and for samples with x exceeding 0.99, exhibit different behavior. The results obtained are interpreted on the basis of our assumption about the existence of a percolation-type phase transition from impurity discontinuum to impurity continuum that occurs in any solid solution.Публікація Size effects in transport properties of Bi1-xSbx thin films(Grupo Pacifico, 2018) Rogacheva, E. I.; Orlova, D. S.; Nashchekina, O. N.Документ Quantum oscillations in thickness dependences of transport properties of topological insulator Bi2Se3 thin films(Publishing House SME "Burlaka", 2017) Rogacheva, E. I.; Sipatov, A. Yu.; Menshikova, S. I.Документ Effect of Bi on Mechanical and Transport Properties of Antimony(Прикарпатський національний університет імені Василя Стефаника, 2019) Rogacheva, E. I.; Doroshenko, A. N.; Khramova, T. I.; Men'shov, Yu. V.Публікація Size Effects in Transport Properties of PbSe Thin Films(IOP Publishing Ltd, 2016) Rogacheva, E. I.; Nashchekina, O. N.; Menshikova, S. I.Публікація Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films(IOP Publishing Ltd, 2016) Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.