Charge carrier mobility in semiconductor solid solutions and percolation phenomena

Rogacheva, E. I.; Nashchekina, O. N.; Martynova, E. V.

Публікація:
Charge carrier mobility in semiconductor solid solutions and percolation phenomena

dc.contributor.author	Rogacheva, E. I.	en
dc.contributor.author	Nashchekina, O. N.	en
dc.contributor.author	Martynova, E. V.	en
dc.date.accessioned	2021-04-06T11:39:57Z
dc.date.available	2021-04-06T11:39:57Z
dc.date.issued	2017
dc.description.abstract	The existence of a range of an anomalous growth in charge carrier mobility under the transition to heavy doping is established for Bi₂Te₃–Sb₂Te₃ solid solutions. This confirms our suggestion about the universal character of critical phenomena accompanying the transition from impurity discontinuum to impurity continuum. The experimental results are analyzed in terms of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.	en
dc.identifier.citation	Rogacheva E. Charge carrier mobility in semiconductor solid solutions and percolation phenomena [Electronic resource] / E. Rogacheva, O. Nashchekina, E. Martynova // IOP Conference Series: Journal of Physics. – 2017. – Vol. 864. – Proceedings of the 33rd International Conference on the Physics of Semiconductors, 31 July-5 August 2016. – Electronic text data. – Beijing, 2016. – P. 012027. – URL: https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012027/pdf, free (accessed 06.04.2021).	en
dc.identifier.doi	doi.org/10.1088/1742-6596/864/1/012027
dc.identifier.uri	https://repository.kpi.kharkov.ua/handle/KhPI-Press/51976
dc.language.iso	en
dc.title	Charge carrier mobility in semiconductor solid solutions and percolation phenomena	en
dc.type	Thesis	en
dspace.entity.type	Publication
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