Flexible thermoelectric module based on zinc oxide thin film grown via SILAR

Ескіз

Дата

2021

DOI

doi.org/10.1016/j.cap.2020.10.012

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Видавець

Анотація

In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K.

Опис

Ключові слова

zinc oxide, crystal structure, thermoelectric module, chemical reactions, flexible polyimide

Бібліографічний опис

Flexible thermoelectric module based on zinc oxide thin film grown via SILAR [Electronic resource] / N. P. Klochko [et al.] // Current Applied Physics. – Electronic text data. – 2021. – No. 21. – P. 121-123. – Access mode: https://www.sciencedirect.com/science/article/abs/pii/S1567173920302443, free (date of the application 01.10.2022.).

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