Size effects in thin PbSe films

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dc.contributor.authorRogacheva, E. I.en
dc.contributor.authorNashchekina, Olga N.en
dc.contributor.authorOlkhovskaya, S. I.en
dc.contributor.authorDresselhaus, M. S.en
dc.date.accessioned2019-02-07T10:02:30Z
dc.date.available2019-02-07T10:02:30Z
dc.date.issued2012
dc.description.abstractThe objects of the study are thin PbSe films with thicknesses d in the range of d = 5.5 – 410 nm, grown by thermal evaporation in vacuum of stoichiometric p-PbSe crystals on KCl substrates and covered with a EuSe layer. The room-temperature d-dependences of the Seebeck coefficient, Hall coefficient, electrical conductivity, charge carrier mobility, thermoelectric power factor are obtained. When d increases to ~ 20 nm, an inversion of the conductivity sign from p to n is observed. In the d-dependences of the transport properties one can isolate a monotonic and oscillatory components, whose presence is attributed to the manifestation of classical and quantum size effects, respectively. The oscillation periods Δd for electronic and hole gases are determined. Theoretically calculated Δd, assuming a size quantization of the electronic and hole spectra, and our estimate of the monotonic component of the electrical conductivity, using the Fuchs-Sondheimer theory, are in good agreement with the experimental data.ru
dc.identifier.citationSize effects in thin PbSe films / E. I. Rogacheva [et al.] // Journal of Thermoelectricity. – 2012. – No 4. – P. 25-32.en
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/39549
dc.language.isoen
dc.publisherInstitute of Thermoelectricityen
dc.publisherAcademy of Sciences and Ministry of Education and Science of Ukraineen
dc.titleSize effects in thin PbSe filmsen
dc.typeArticleen

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Кафедра "Природничі науки"
Кафедра "Менеджмент"
Кафедра "Фізика"