Charge carrier mobility in semiconductor solid solutions and percolation phenomena

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dc.contributor.authorRogacheva, E. I.en
dc.contributor.authorNashchekina, Olga N.en
dc.contributor.authorMartynova, E. V.en
dc.date.accessioned2021-04-06T11:39:57Z
dc.date.available2021-04-06T11:39:57Z
dc.date.issued2017
dc.description.abstractThe existence of a range of an anomalous growth in charge carrier mobility under the transition to heavy doping is established for Bi₂Te₃–Sb₂Te₃ solid solutions. This confirms our suggestion about the universal character of critical phenomena accompanying the transition from impurity discontinuum to impurity continuum. The experimental results are analyzed in terms of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.en
dc.identifier.citationRogacheva E. Charge carrier mobility in semiconductor solid solutions and percolation phenomena [Electronic resource] / E. Rogacheva, O. Nashchekina, E. Martynova // IOP Conference Series: Journal of Physics. – 2017. – Vol. 864. – Proceedings of the 33rd International Conference on the Physics of Semiconductors, 31 July-5 August 2016. – Electronic text data. – Beijing, 2016. – P. 012027. – URL: https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012027/pdf, free (accessed 06.04.2021).en
dc.identifier.doidoi.org/10.1088/1742-6596/864/1/012027
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/51976
dc.language.isoen
dc.titleCharge carrier mobility in semiconductor solid solutions and percolation phenomenaen
dc.typeThesisen

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