Кафедра "Фізика металів і напівпровідників"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4703

Офіційний сайт кафедри http://web.kpi.kharkov.ua/fmp

Від 2002 року кафедра має назву "Фізика металів і напівпровідників", попередня назва – кафедра металофізики.

Кафедра металофізики організована в 1930 році у складі фізико-механічного факультету ХММІ. Деканом факультету був у ті роки видатний вчений-фізик, академік Іван Васильович Обреїмов.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут". За час існування кафедрою підготовлено близько 3000 інженерів, у тому числі і для зарубіжних країн.

У складі науково-педагогічного колективу кафедри працюють: 3 доктора та 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора.

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Зараз показуємо 1 - 10 з 22

Scandium-silicon multilayer X-ray mirrors with CrB2 barrier layers
(Сумський державний університет, 2018) Pershyn, Yuriy P.; Devizenko, A. Yu.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Voronov, Dmitriy L.; Gullikson, E. M.
Methods of X-ray reflectometry λ0.154 nm), cross-sectional transmission electron microscopy and re flectometry in the EUV region (λ = 41-51 nm) were used to investigate the barrier properties of CrB2 layers 0.3-1.3 nm thick in Sc/CrB2/Si multilayer X-ray mirrors (MXMs) deposited by DC magnetron sputtering. It is shown that barrier layers of ~ 0.3 nm separate Sc and Si layers completely and prevent interacting the Sc and Si layers. Thinner chromium diboride layers interact with the matrix layers forming interlayers containing mostly ScB2 on the Si-on-Sc interfaces and CrSi2 on the Sc-on-Si ones. Scandium-silicon MXMs with barrier layers on the both interfaces are shown to retain high reflectivity at the wavelength of λ ~ 47 nm.
Growth and structure of WC/SI multilayer X-ray mirror
(Національний науковий центр «Харківський фізико-технічний інститут», 2018) Pershyn, Yuriy P.; Chumak, V. S.; Shypkova, I. G.; Mamon, Valentine V.; Devizenko, A. Yu.; Kondratenko, Valeriy V.; Reshetnyak, M. V.; Zubarev, Evgeniy N.
WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and crosssectional transmission electron microscopy (TEM). Carbide and silicon layers are amorphous throughout the studied thickness range. The WC layers interact with Si layers with formation of tungsten silicides (WSi2, W5Si3) and silicon carbide in as-deposited state. The bottom interlayer (WC-on-Si) consists of two subzones of approximately equal thickness. An estimation of the thickness, density, and composition of all layers is made. Based on the experimental data, a five-layer model of the WC/Si MXM structure is suggested.
Carbon Honeycomb High Capacity Storage for Gaseous and Liquid Species
(American Physical Society, 2016) Zubarev, Evgeniy N.; Krainyukova, Nina V.
We report an exceptionally stable honeycomb carbon allotrope obtained by deposition of vacuumsublimated graphite. The allotrope structures are derived from our low temperature electron diffraction and electron microscopy data. These structures can be both periodic and random and are built exclusively from sp2-bonded carbon atoms, and may be considered as three-dimensional graphene. They demonstrate high levels of physical absorption of various gases unattainable in other carbon forms such as fullerites or nanotubes. These honeycomb structures can be used not only for storage of various gases and liquids but also as a matrix for new composites.
Hydrogen Storage in VNx-Hy Thin Films
(Open Access Library Inc., 2015) Bryk, Viktor; Guglya, Aleksey; Kalchenko, Aleksandr; Marchenko, Ivan; Marchenko, Yuriy; Solopikhina (Melnikova), Elena; Vlasov, Victor; Zubarev, Evgeniy N.
Vanadium or its alloy-based hydrides are intensively studied at the moment with regard to their use as hydrogen absorbents. Most experiments were carried out using “bulk” materials. This paper uses ion beam-assisted deposition technology (IBAD) to create thin-film nanocrystalline VNx-Hy hydrogen storages. The transmission electron microscopy and scanning electron microscopy were used to study the initial stages of the film formation. The main mechanisms of the for mation of intergranular pores in nanogranular structures have been established. The interrelation of the parameters of the IBAD and those of film structure has been shown. The obtained data allowed for the explanation of the mechanisms of hydrogen absorption and desorption by thin films. It was shown that the availability of branched network of intergranular pores allows VNx-Hy structures to accumulate hydrogen within a few minutes at a pressure of 0.5 MPa. Hydrogen in amount of up to 2.55 wt% is retained in the films of 3 μm thick at room temperature and atmos pheric pressure. The hydrogen desorption starts at 100˚C
Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation
(IOP Publishing Ltd, 2009) Pershyn, Yuriy P.; Zubarev, Evgeniy N.; Voronov, D. L.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Artioukov, Y. A.; Uspenskii, Y. A.; Vinogradov, A. V.
Specific structural changes in Sc/Si multilayer mirrors irradiated with extreme ultraviolet (EUV) laser single pulses (λ = 46.9 nm) at near damage threshold fluences (0.04–0.23 J cm−2) are analysed. We have identified melting of surface layers as the basic degradation mechanism for the mirrors. Both heat generation during silicide formation and low heat conduction of the layered system significantly decreases the degradation threshold of Sc/Si multilayer mirrors compared with bulk materials. The results are relevant to the use of the multilayer mirrors for shaping and directing the intense beams produced by the new generation of coherent EUV sources
The structure of Mo/Si multilayers prepared in the conditions of ionic assistance
(Springer, 2008) Zubarev, Evgeniy N.; Kondratenko, V. V.; Sevryukova, V. A.; Yulin, S. A.; Feigl, T.; Kaiser, N.
The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.
Interdiffusion in Sc/Si multilayers
(ESRF, 2008) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Pershin, Yuri P.; Sevrukova, Victoriya A.; Bugaev, Yegor A.
Structural transformations in Sc/Si multilayers irradiated by EUV lasers,
(SPIE, 2007) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Pershyn, Yuriy P.; Sevryukova, Victoriya A.; Kondratenko, Valeriy V.; Artioukov, Igor A.; Uspenskiy, Yuriy A.; Grisham, Michael; Vaschenko, Georgiy; Menoni, Carmen S.; Rocca, Jorge J.
Multilayer mirrors for the extreme ultraviolet (EUV) are key elements for numerous applications of coherent EUV sources such as new tabletop lasers and free-electron lasers. However the field of applications is limited by the radiation and thermal stability of the multilayers. Taking into account the growing power of EUV sources the stability of the optics becomes crucial. To overcome this problem it is necessary to study the degradation of multilayers and try to increase their temporal and thermal stability. In this paper we report the results of detailed study of structural changes in Sc/Si multilayers when exposed to intense EUV laser pulses. Various types of surface damage such as melting, boiling, shock wave creation and ablation were observed as irradiation fluencies increase. Cross-sectional TEM study revealed that the layer structure was completely destroyed in the upper part of multilayer, but still survived below. The layers adjacent to the substrate remained intact even through the multilayer surface melted down, though the structure of the layers beneath the molten zone was noticeably changed. The layer structure in this thermally affected zone is similar to that of isothermally annealed samples. All stages of scandium silicide formation such as interdiffusion, solid-state amorphization, silicide crystallization etc., are present in the thermally affected zone. It indicates a thermal nature of the damage mechanism. The tungsten diffusion barriers were applied to the scandium/silicon interfaces. It was shown that the barriers inhibited interdiffusion and increased the thermal stability of Sc/Si mirrors.
Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors
(Springer, 2007) Pershyn, Yuriy P.; Voronov, D. L.; Zubarev, Evgeniy N.; Sevryukova, V. A.; Kondratenko, V. V.; Vaschenko, G.; Grisham, M.; Menoni, C. S.; Rocca, J. J.; Vinogradov, A. V.; Artyukov, I. A.; Uspenskii, Yu. A.
Specific structural changes in Sc/Si multilayers (MLs) irradiated by nanosecond 46.9-nm single laser pulses with fluences of 0.04-5.00 J/cm2 were studied by methods of SEM and cross-sectional TEM. The threshold damage was found to be 0.08 J/cm2 The ML melts down under the fluence F >0.08 J/cm2 and the exothermic reaction of silicide formation starts. Main degradation mechanisms of MLs are discussed. The results of this study can be used for development of advanced multilayer mirrors capable handling the intense radiation conditions of new generation coherent X-ray sources.
Thermoresistive multilayer mirrors antidiffusion barriers for work at the wavelengths 40-50nm
(American Institute of Physics, 2002) Voronov, Dmitriy L.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Penkov, Alexey V.; Pershin, Yuriy P.; Ponomarenko, Alexander G.; Artioukov, Igor A.; Vinogradov, Alexander V.; Uspenskii, Yuriy A.
To improve the thermal stability of Si/Sc multilayer mirrors, thin layers of W were deposited at interlayer boundaries. Using X-ray scattering and transmission electron microscopy, we studied the interaction of Si and Sc layers at elevated temperatures. It was shown that the W layers of 0.5-0.8 nm thickness form dense WSi2 barriers, which prevent a direct contact between Si and Sc and greatly slow down the formation of scandium silicides. Presented measurements show that Si/W/Sc/W multilayers fabricated by de-magnetron sputtering possess long thermal stability up to 250° C and the normal incidence reflectivity of 24 %.