Кафедра "Мікро- та наноелектроніка"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/2787

Офіційний сайт кафедри http://web.kpi.kharkov.ua/mne

Від 2022 року (НАКАЗ 31 ОД від 21.01.2022 року) кафедра має назву "Мікро- та наноелектроніка", первісна назва – "Фізичне матеріалознавство для електроніки та геліоенергетики". З 1.09.2024 р. (НАКАЗ 303 ОД від 28.08.2024 року ) кафедра "Радіоелектроніка" приєднана до кафедри "Мікро- та наноелектроніка"

Кафедра "Фізичне матеріалознавство для електроніки та геліоенергетики" була заснована у 1988 році з ініціативи Заслуженого діяча науки та техніки України, доктора фізико-математичних наук, профессора Бойка Бориса Тимофійовича.

За час існування кафедри в галузі електроніки на основі тонкоплівкових моделей були розроблені: нові технологічні методи виготовлення надійних конденсаторів на основі танталу та ніобію, елемент захисту електронних схем від імпульсних перепадів напруги, що не має світових аналогів, резистивний газовий датчик адсорбційно-напівпровідникового типу для аналізу навколишнього середовища тощо.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут".

У складі науково-педагогічного колективу кафедри працюють: 1 доктор технічних наук, 4 кандидата технічних наук, 2 кандидата фізико-математичних наук; 3 співробітника мають звання доцента, 2 – старшого наукового співробітника, 1 – старшого дослідника.

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Adopting of DC Magnetron Sputtering Method For Preparing Semiconductor Films
(Institute of Electrical and Electronics Engineers, 2017) Kirichenko, M. V.; Zaitsev, R. V.; Dobrozhan, A. I.; Khrypunov, G. S.; Kharchenko, M. M.
It has been carried out the experimental studies of the process of cadmium telluride magnetron sputtering with direct current, and the impact of a magnetron sputtering mode on CdTe films crystalline structure. In order to create thin-film solar cells based on cadmium sulfide and telluride CdTe films for the base layers of thin film solar cells was obtained on flexible polyimide substrates by magnetron sputtering with direct current for the first time. It has found that increasing the magnetron discharge current up to 80 mA leads to increase in coherent scattering regions what is due to an increase in the thickness of the cadmium telluride films of the hexagonal modification having a columnar structure.
Constructive solution of highly effective photoenergy module: development and experimental testing
(Национальный технический университет "Харьковский политехнический институт", 2019) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Zaitseva, L. V.; Chugai, O. N.; Drozdova, A. A.
Based on experimental study and computermodeling of working temperature influence on the efficiency of Chinese production silicon solar cells identified temperature dependence of efficiency shows the feasibility of using Chinese production Si-SC in the construction of photovoltaic thermal system, which together with the heat pump is part of a combined system for hot water supply, heating and air conditioning. Based on a detailed analysis of the working temperature influence on the efficiency of photovoltaic processes that determine the solar cells work, it has been developed the optimal construction and technological solution of hybrid solar generated module, the main feature ofwhich is the heat exchange block, designed to reduce the solar cells working temperature. The experimental testing of hybrid modules samples equipped with developed cooling system, high-voltage part of power take-off system demonstrates their reliability and high efficiency which allow to achieve the such module efficiency up to 18.5 %.
Crystal Structure of Nanoscale Tin Dioxide Films Produced by Magnetron Sputtering
(Kyiv polytechnic institute, 2014) Sokol, Yevgen I. ; Pirohov, O. V.; Klochko, N. P.; Novikov, V. A.; Khrypunov, G. S.; Klepikova, K. S.
Investigation of direct current magnetron sputtering parameters effects on the crystal structure of gas sensitive tin dioxide films has revealed that the change in the substrate temperature and in the film thickness leads to the transition from the condensation of metastable conglomerates of amorphous globules to the ≈15 nm SnO₂ crystallites with three-dimensional shape and well-defined edges. The dependence of the SnO₂ structure from the working Ar-O₂ gas mixtures and from their humidity evidences the significant role of the adsorption in the kinetics of the magnetron sputtering of tin dioxide. Due to the adsorption the morphological and dimensional characteristics of the tin dioxide films demonstrate the anomalous stability of the amorphous globules with their enhanced specific surface energy and the stabilization of the amorphous state, selectively retained even after the SnO₂ film reach in general the critical thickness of the crystallization.
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
(Scientific and Technological Corporation "Institute for Single Crystals", 2011) Zaitsev, R. V.; Kirichenko, M. V.; Doroshenko, A. N.; Khrypunov, G. S.
Using the computer simulation method it was studied the dependences of nonequili-brium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.
Development and new application of single-crystal silicon solar cells
(2011) Khrypunov, G. S.; Kopach, V. R.; Kirichenko, M. V.; Zaitsev, R. V.
Electronic Parameters of a New Thin Film Composition for Kesterite Solar Cell
(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Lukianova, O. V.; Lyubov, V. M.; Kirichenko, M. V.
High-voltage power take-off system for photovoltaic station
(Кременчуцький національний університет ім. Михайла Остроградського, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Prokopenko, D. S.
Influence of UV light of extraterrestrial solar irradiance on structure and properties of ZnO films prepared through pulsed electrochemical deposition and via SILAR method
(Сумський державний університет, 2018) Klochko, N. P.; Klepikova, K. S.; Petrushenko, S. I.; Kopach, V. R.; Khrypunov, G. S.; Zhadan, D. O.; Dukarov, S. V.; Lyubov, V. M.; Kirichenko, M. V.; Surovitskiy, S. V.; Khrypunova, A. L.
The investigations of effect of long-wave (UVA) and short-wave (UVC) ultraviolet light of extraterres-trial solar irradiance on the nanostructured zinc oxide arrays, which were grown by pulsed electrodeposition, as well as on the ZnO and ZnO:In films produced by Successive Ionic Layer Adsorption and Reaction technique (SILAR) confirmed their suitability as UVA-active photosensitive materials. The crystal structure, surface morphology, chemical composition and optical properties found no obvious significant destructive changes after UVC irradiation. However, we detected some irreversible changes in the nature of point defects under the influence of UVC, which affect the ZnO and ZnO:In resistivity, activation energy, photosensitivity and thermoelectrical properties.
Mathematical Modeling of Physical Processes of Electromagnetic Field Transformation in Elastic Oscillations Field in Microthick Layers of Metals
(Сумський державний університет, 2017) Plesnetsov, S. Yu.; Migushchenko, R. P.; Petryschev, O. N.; Suchkov, G. M.; Khrypunov, G. S.
The results of the mathematical studies on the modeling of high-frequency electromagnetic field conversion in the field of elastic oscillations process in microthick surface layers or electrically conductive ferromagnetic material thin films placed in a magnetic field are given, taking into account the coherence of elastic, electric and magnetic properties of the metal. It is shown that in practical calculations, especially in the case of high-frequency oscillations, it is necessary to take into account thickness of skin layer in which electromagnetic field transforms into acoustic field.
Nanostructured Semiconductor Heterostructures for Ultraviolet Sensors, Solar Cells and Semitransparent Diodes Manufactured by Chemical and Electrochemical Methods
(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Klepikova, K. S.; Lukianova, O. V.; Korsun, V. E.; Lyubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.
Nanostructured Thermoelectric Thin Films Obtained by Wet Chemical Synthesis
(Sumy State University, 2017) Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Otchenashko, О. N.; Zhadan, D. O.; Kirichenko, M. V.; Nikitin, V. О.; Maslak, M. O.; Khrypunova, A. L.
Nanostructured pristine lead sulfide and copper iodide semiconductor films as well as copper doped lead sulfide and iodine-enriched copper iodide layers were obtained on solid and flexible substrates via Chemical Bath Deposition (CBD) and Successive Ionic Layer Adsorption and Reaction (SILAR) methods. Crystal structures, optical, electric and thermoelectric properties of the layers have been studied. It was shown that the obtained films deposited on glass and mica substrates are smooth and continuous, have polycrystalline structures of the corresponding bulk semiconductors with grain sizes of several tens of nanometers. Investigations of the optical properties revealed, that their band gaps are characteristic for the corresponding bulk materials. All obtained semiconductor layers are p-type of conductivity. The resistivity of the lead sulphide films were reduced noticeably by means of their doping with copper. Iodination of the copper iodide films convert them into degenerate semiconductors. Investigations of the temperature dependent resistivity, the Seebeck coefficients and power factors confirmed that the obtained materials are promising for their use in thin-film solar thermoelectric generators with the aim of solar heat transforming into electricity.
Nanostructured ZnO arrays fabricated via pulsed electrodeposition and coated with Ag nanoparticles for ultraviolet photosensors
(Сумський державний університет, 2018) Klochko, N. P.; Klepikova, K. S.; Petrushenko, S. I.; Kopach, V. R.; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Kirichenko, M. V.; Dukarov, S. V.; Khrypunova, A. L.
Nanostructured one-dimensional (1-D) ZnO arrays fabricated via pulsed electrodeposition and coated with Ag nanoparticles are researched with the aim of their using in the ultraviolet (UV) photosensors. The results of the crystal structure investigations showed that the pulsed electrodeposited zinc oxide arrays are polycrystalline in nature and matching with hexagonal wurtzite modification of ZnO. To enhance its UV photosensitivity, the silver nanoparticles (AgNPs) with different shape and an average size of 60 nm, as well as 300-500 nm long Ag nanorods with ~30 nm diameter, are precipitated mainly on the (002), (101) and (100) ZnO planes. Study of electrical properties and electronic parameters of the 1-D ZnO and Ag/ZnO nanocomposites using a current-voltage and capacity-voltage characteristics identified the important role of the high double Schottky barriers at the ZnO intergrain boundaries for the creation of great UV photo-sensitivity. It is proved that through monitoring the amount of AgNPs on the ZnO surface the electrical properties and electronic parameters of the Ag/ZnO nanocomposites, and consequently, the output parameters of the UV photosensors can be controlled.
Near Ultraviolet Photodetector Based on Electrodeposited in Pulse Mode Zinc Oxide Arrays
(Institute of Electrical and Electronics Engineers, 2016) Klepikova, K. S.; Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Lubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.
Single-crystal silicon solar cell efficiency increase in magnetic field
(Scientific and Technological Corporation "Institute for Single Crystals", 2010) Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.; Lukyanov, E. O.; Khrypunov, G. S.; Samofalov, V. N.
It is established in experiment that efficiency of unijunction (UJ) single-crystal silicon solar cells (Si-SC) with horizontal n⁺-p-p⁺ diode structure may increase by a factor of approximately 1.1 after their holding at room temperature during 7 days in perpendicularly oriented stationary magnetic field with 0.2 T induction. The subsequent stabilizing of the obtained positive effect is shown to be realizable by attachment of a thin magnetic vinyl layer (creating in the UJ Si-SC base crystal a magnetic field with induction not exceeding 0.05 T) to the UJ Si-SC at the back electrode side.
Stand alone thermo-photovoltaic power plant with solar radiation concentrator
(Кременчуцький національний університет ім. Михайла Остроградського, 2016) Kirichenko, M. V.; Zaitsev, R. V.; Khrypunov, G. S.
Structure and Optical Properties of CdTe and CdS Thin Films after Hard Ultraviolet Irradiation
(Прикарпатський національний університет ім. Василя Стефаника, 2019) Kopach, G. I.; Dobrozhan, A. I.; Khrypunov, G. S.; Mygushchenko, R. P.; Kropachek, О. Y.; Zaitsev, R. V.; Meriuts, A. V.
Structure and Properties of the Cadmium Sulfide Films Received by Magnetron Dispersion Method
(Сумський державний університет, 2017) Zaitsev, R. V.; Kirichenko, M. V.; Mygushchenko, R. P.; Veselova, N. V.; Khrypunov, G. S.; Dobrozhan, A. I.; Zaitseva, L. V.
For the purpose of creation of the economic, suitable for large-scale application technology of formation of a layer of wide-scale "window", for thin-film photo-electric converters on the basis of sulfide and telluride of cadmium the pilot studies of temperature effect of a deposition of the films of sulfide of cadmium received by method of magnetron dispersion on a direct current on their optical properties and crystalline structure were conducted. By method of a two-channel optical spectroscopy it is established that a deposition of films of sulfide of cadmium at a temperature of 160 °C allows to form layers with a width of forbidden region of 1,41 eV that approaches value, characteristic of monocrystals, and the density of the photon flux passing through a cadmium sulfide layer in a spectral interval of a photosensitivity of telluride of cadmium at the level of 37,0 W·nm·cm².
The Сadmium Telluride Thin Films for Flexible Solar Cell Received by Magnetron Dispersion Method
(Sumy State University, 2017) Zaitsev, R. V.; Khrypunov, G. S.; Veselova, N. V.; Kirichenko, M. V.; Kharchenko, M. M.; Zaitseva, L. V.
For the purpose of creation of thin-film photoelectric converters on the basis of sulfide and telluride of cadmium the pilot studies of process of magnetron dispersion on a direct current of telluride of cadmium and influence of the modes of magnetron dispersion on crystalline structure of films of CdTe are conducted. CdTe films for basic layers of sheet photoelectric converters on flexible polyimide substrate by the method of magnetron dispersion on a direct current are received for the first time. It is experimentally shown that "chloride" processing of the received layers of telluride of cadmium leads to transformation of metastable hexagonal modification of telluride of cadmium in stable cubic. At the same time at the expense of the eutectic recrystallization body height of the sizes of areas of a coherent dispelling much and decrease by 1,5 times of level of microstrains is observed.